Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

  1. Santos, I.
  2. Castrillo, P.
  3. Windl, W.
  4. Drabold, D.A.
  5. Pelaz, L.
  6. Marqués, L.A.
Journal:
Physical Review B - Condensed Matter and Materials Physics

ISSN: 1098-0121,  1550-235X

Year of publication: 2010

Volume: 81

Issue: 3

Type: Article

DOI: 10.1103/PHYSREVB.81.033203 GOOGLE SCHOLAR lock_openUVADOC editor HANDLE: https://hdl.handle.net/10324/31965
UVaDOC. Repositorio Documental de la Universidad de Valladolid: lock_openOpen access Externo lock_openOpen access Externo

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