Monte Carlo simulation of silicon atomic displacement and amorphization induced by ion implantation
- García, L.J.
- Kawamura, Y.
- Uematsu, M.
- Hernndez-Mangas, J.M.
- Itoh, K.M.
Revista:
Journal of Applied Physics
ISSN: 0021-8979
Any de publicació: 2011
Volum: 109
Número: 12
Tipus: Article