Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2 O3, HfO2, and nanolaminates on different silicon substrates

  1. Campabadal, F.
  2. Rafí, J.M.
  3. Zabala, M.
  4. Beldarrain, O.
  5. Faigón, A.
  6. Castán, H.
  7. Gómez, A.
  8. García, H.
  9. Dueas, S.
Zeitschrift:
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

ISSN: 2166-2754,  2166-2746

Datum der Publikation: 2011

Ausgabe: 29

Nummer: 1

Art: Konferenz-Beitrag

DOI: 10.1116/1.3532544 GOOGLE SCHOLAR

Objetivos de desarrollo sostenible

Datenquelle: Scopus