Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

  1. Ossorio, Ó.G.
  2. Vinuesa, G.
  3. García, H.
  4. Sahelices, B.
  5. Dueñas, S.
  6. Castán, H.
  7. Ritala, M.
  8. Leskelaˇ, M.
  9. Kemell, M.
  10. Kukli, K.
Journal:
Solid-State Electronics

ISSN: 0038-1101

Year of publication: 2021

Volume: 186

Type: Article

DOI: 10.1016/J.SSE.2021.108114 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus