Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

  1. García, H.
  2. Vinuesa, G.
  3. Ossorio, Ó.G.
  4. Sahelices, B.
  5. Castán, H.
  6. Dueñas, S.
  7. González, M.B.
  8. Campabadal, F.
Aldizkaria:
Solid-State Electronics

ISSN: 0038-1101

Argitalpen urtea: 2021

Alea: 183

Mota: Artikulua

DOI: 10.1016/J.SSE.2021.108113 GOOGLE SCHOLAR
Datuen iturria: Scopus