Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo

  1. Martin-Bragado, I.
  2. Tian, S.
  3. Johnson, M.
  4. Castrillo, P.
  5. Pinacho, R.
  6. Rubio, J.
  7. Jaraiz, M.
Journal:
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ISSN: 0168-583X

Year of publication: 2006

Volume: 253

Issue: 1-2

Pages: 63-67

Type: Article

DOI: 10.1016/J.NIMB.2006.10.035 GOOGLE SCHOLAR
Data source: Scopus