Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo

  1. Martin-Bragado, I.
  2. Tian, S.
  3. Johnson, M.
  4. Castrillo, P.
  5. Pinacho, R.
  6. Rubio, J.
  7. Jaraiz, M.
Aldizkaria:
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ISSN: 0168-583X

Argitalpen urtea: 2006

Alea: 253

Zenbakia: 1-2

Orrialdeak: 63-67

Mota: Artikulua

DOI: 10.1016/J.NIMB.2006.10.035 GOOGLE SCHOLAR
Datuen iturria: Scopus