Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena

  1. Jaraiz, M.
  2. Gilmer, G.H.
  3. Poate, J.M.
  4. De La Rubia, T.D.
Journal:
Applied Physics Letters

ISSN: 0003-6951

Year of publication: 1996

Volume: 68

Issue: 3

Pages: 409-411

Type: Article

DOI: 10.1063/1.116701 GOOGLE SCHOLAR
Data source: Scopus