Temperature distribution in power GaAs field effect transistors using spatially resolved photoluminescence mapping

  1. Landesman, J.P.
  2. Martin, E.
  3. Braun, P.
Actas:
Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Ano de publicación: 1999

Páxinas: 185-189

Tipo: Achega congreso

DOI: 10.1109/IPFA.1999.791331 GOOGLE SCHOLAR

Obxectivos de Desenvolvemento Sustentable

Fonte de datos: Scopus