Achieving junction stability in heavily doped epitaxial Si:P

  1. Tsai, C.H.
  2. Hsu, Y.H.
  3. Santos, I.
  4. Pelaz, L.
  5. Kowalski, J.E.
  6. Liou, J.W.
  7. Woon, W.Y.
  8. Lee, C.K.
Aldizkaria:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Argitalpen urtea: 2021

Alea: 127

Mota: Artikulua

DOI: 10.1016/J.MSSP.2021.105672 GOOGLE SCHOLAR lock_openUVADOC editor

Garapen Iraunkorreko Helburuak

Datuen iturria: Scopus