Achieving junction stability in heavily doped epitaxial Si:P
- Tsai, C.H.
- Hsu, Y.H.
- Santos, I.
- Pelaz, L.
- Kowalski, J.E.
- Liou, J.W.
- Woon, W.Y.
- Lee, C.K.
Revista:
Materials Science in Semiconductor Processing
ISSN: 1369-8001
Ano de publicación: 2021
Volume: 127
Tipo: Artigo