Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge

  1. García, H.
  2. Jiménez-Molinos, F.
  3. Vinuesa, G.
  4. González, M.B.
  5. Roldán, J.B.
  6. Miranda, E.
  7. Campabadal, F.
  8. Castán, H.
  9. Dueñas, S.
Journal:
Solid-State Electronics

ISSN: 0038-1101

Year of publication: 2022

Volume: 194

Type: Article

DOI: 10.1016/J.SSE.2022.108385 GOOGLE SCHOLAR lock_openUVADOC editor HANDLE: https://hdl.handle.net/10324/58643
UVaDOC. Repositorio Documental de la Universidad de Valladolid: lock_openOpen access Externo lock_openOpen access Externo

Sustainable development goals

info

SDG classification obtained using Aurora SDG artificial intelligence model.

Related Projects

FABRICACIÓN, CARACTERIZACIÓN, SIMULACIÓN, MODELADO Y APLICACIONES DE DISPOSITIVOS DE CONMUTACIÓN RESISTIVA. (2018-2021)
Data source: Scopus