Electrical defects in atomic layer deposited HfO2 films on silicon: Influence of precursor chemistries and substrate treatment
- Gusev, E (coord.)
ISSN: 1568-2609
ISBN: 1-4020-4365-1
Datum der Publikation: 2006
Ausgabe: 220
Seiten: 287-289
Kongress: NATO Advanced Research Workshop on Defects in Advanced High -K Dielectric Nano-Electronic Seminconductor Devices
Art: Konferenz-Beitrag