Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices

1. García, H.
2. Vinuesa, G.
3. García-Ochoa, E.
4. Aguirre, F.L.
5. González, M.B.
6. Jiménez-Molinos, F.
7. Campabadal, F.
8. Roldán, J.B.
9. Miranda, E.
10. Dueñas, S.
11. Castán, H.