Praseodymium Content Influence on the Resistive Switching Effect of HfO2-Based RRAM Devices
- Vinuesa, G.
- Garcia, H.
- Ossorio, O.G.
- Garcia-Ochoa, E.
- Aarik, L.
- Kukli, K.
- Castan, H.
- Duenas, S.
Konferenzberichte:
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
ISBN: 9798350302400
Datum der Publikation: 2023
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
Art: Konferenz-Beitrag