Praseodymium Content Influence on the Resistive Switching Effect of HfO2-Based RRAM Devices

  1. Vinuesa, G.
  2. Garcia, H.
  3. Ossorio, O.G.
  4. Garcia-Ochoa, E.
  5. Aarik, L.
  6. Kukli, K.
  7. Castan, H.
  8. Duenas, S.
Proceedings:
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

ISBN: 9798350302400

Year of publication: 2023

14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings

Type: Conference paper

DOI: 10.1109/CDE58627.2023.10339528 GOOGLE SCHOLAR

Sustainable development goals

Data source: Scopus