Electronica
New Jersey Institute of Technology
Newark, Estados UnidosPublicaciones en colaboración con investigadores/as de New Jersey Institute of Technology (2)
1998
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Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion
Materials Science and Engineering A, Vol. 253, Núm. 1-2, pp. 269-274
1997
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B diffusion and clustering in ion implanted Si: The role of B cluster precursors
Applied Physics Letters, Vol. 70, Núm. 17, pp. 2285-2287