LUIS ALBERTO BAILON VEGA-rekin lankidetzan egindako argitalpenak (3)

1999

  1. Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

    Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860

  2. Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

    Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980

1996

  1. Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions

    Journal of Applied Physics, Vol. 79, Núm. 1, pp. 310-315