Publicaciones en las que colabora con JUAN JOSE BARBOLLA SANCHO (20)

2006

  1. A 32-mW 320-MHz continuous-time complex delta-sigma ADC for multi-mode wireless-LAN receivers

    IEEE Journal of Solid-State Circuits, Vol. 41, Núm. 2, pp. 339-350

2005

  1. A dual-mode, complex, ΔΣ ADC in CMOS for Wireless-LAN receivers

    Proceedings of SPIE - The International Society for Optical Engineering

  2. Jitter effect comparison on continuous-time sigma-delta modulators with different feedback signal shapes

    Proceedings of SPIE - The International Society for Optical Engineering

  3. Noise simulation of continuous-time ΣΔ modulators

    AIP Conference Proceedings

  4. Nonlinearity correction for multibit ΔΣ DACs

    IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 52, Núm. 6, pp. 1033-1041

2004

  1. Low-power pipeline ADC for wireless LANs

    IEEE Journal of Solid-State Circuits, Vol. 39, Núm. 8, pp. 1338-1340

2003

  1. A switched Opamp-based bandpass filter: Design and implementation in a 0.35 μm CMOS technology

    Analog Integrated Circuits and Signal Processing, Vol. 34, Núm. 3, pp. 201-209

2002

  1. Design of a switched opamp-based bandpass filter in a 0.35 μm CMOS technology

    Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

2001

  1. Design of a CMOS fully differential switched-opamp for SC circuits at very low power supply voltages

    Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems

1999

  1. Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377

  2. Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions

    Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860

  3. Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions

    Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980

  4. Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions

    Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 413-418

1998

  1. Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions

    Semiconductor Science and Technology, Vol. 13, Núm. 4, pp. 389-393

1997

  1. Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

    Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150

  2. Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs

    Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4338-4345

  3. Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

    Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828

  4. Thermal emission processes of DX centres in AlxGa1-xAs:Si

    Solid-State Electronics, Vol. 41, Núm. 1, pp. 103-109

1996

  1. Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions

    Journal of Applied Physics, Vol. 79, Núm. 1, pp. 310-315

1995

  1. Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078