Materiales Semiconductores y Nanoestructuras para la Optoelectrónica
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University of Pittsburgh
Pittsburgh, Estados UnidosUniversity of Pittsburgh-ko ikertzaileekin lankidetzan egindako argitalpenak (5)
2006
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Phonons in SiC from INS, IXS, and Ab-initio calculations
Materials Science Forum
2003
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Four current examples of characterization of silicon carbide
SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES
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Lattice Dynamics of 4H-SiC by Inelastic X-Ray Scattering
Materials Science Forum
2002
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Determination of the phonon dispersion of zinc blende (3C) silicon carbide by inelastic x-ray scattering
Applied Physics Letters, Vol. 80, Núm. 23, pp. 4360-4362
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Four current examples of characterization of silicon carbide
Materials Research Society Symposium - Proceedings