Publicaciones en las que colabora con RAY DUFFY (7)

2012

  1. Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

    Journal of Applied Physics, Vol. 111, Núm. 3

  2. Preface: 19th International Conference on Ion Implantation Technology

    AIP Conference Proceedings

2010

  1. Simulation of p-n junctions: Present and future challenges for technologies beyond 32 nm

    Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, Vol. 28, Núm. 1, pp. C1A1-C1A6

2009

  1. Atomistic process modeling based on kinetic Monte Carlo and molecular dynamics for optimization of advanced devices

    Technical Digest - International Electron Devices Meeting, IEDM

2008

  1. Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

    Technical Digest - International Electron Devices Meeting, IEDM

2005

  1. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions

    2005 Spanish Conference on Electron Devices, Proceedings