ALFONSO
GOMEZ BRAVO
PROFESOR CONTRATADO DOCTOR
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Instituto de Microelectrónica de Barcelona
Barcelona, EspañaPublicacións en colaboración con investigadores/as de Instituto de Microelectrónica de Barcelona (3)
2013
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2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O 3, HfO2 and nanolaminated dielectrics
Solid-State Electronics, Vol. 79, pp. 65-74
2011
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Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2 O3, HfO2, and nanolaminates on different silicon substrates
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
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Negative-resistance effect in Al2O3 based and nanolaminated MIS structures
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011