Publicaciones en las que colabora con Dale C. Jacobson (2)

1998

  1. Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model

    Journal of Applied Physics, Vol. 83, Núm. 11, pp. 6182-6184

1997

  1. Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

    Journal of Applied Physics, Vol. 81, Núm. 9, pp. 6031-6050