JUAN JOSE
BARBOLLA SANCHO
Chercheur dans le période 1983-2005
LUIS
QUINTANILLA SIERRA
PROFESORES TITULARES DE UNIVERSIDAD
Publications dans lesquelles il/elle collabore avec LUIS QUINTANILLA SIERRA (20)
2006
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A 32-mW 320-MHz continuous-time complex delta-sigma ADC for multi-mode wireless-LAN receivers
IEEE Journal of Solid-State Circuits, Vol. 41, Núm. 2, pp. 339-350
2005
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A dual-mode, complex, ΔΣ ADC in CMOS for Wireless-LAN receivers
Proceedings of SPIE - The International Society for Optical Engineering
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Jitter effect comparison on continuous-time sigma-delta modulators with different feedback signal shapes
Proceedings of SPIE - The International Society for Optical Engineering
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Noise simulation of continuous-time ΣΔ modulators
AIP Conference Proceedings
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Nonlinearity correction for multibit ΔΣ DACs
IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 52, Núm. 6, pp. 1033-1041
2004
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Low-power pipeline ADC for wireless LANs
IEEE Journal of Solid-State Circuits, Vol. 39, Núm. 8, pp. 1338-1340
2003
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A switched Opamp-based bandpass filter: Design and implementation in a 0.35 μm CMOS technology
Analog Integrated Circuits and Signal Processing, Vol. 34, Núm. 3, pp. 201-209
2002
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Design of a switched opamp-based bandpass filter in a 0.35 μm CMOS technology
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
2001
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Design of a CMOS fully differential switched-opamp for SC circuits at very low power supply voltages
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
1999
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Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication
Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 373-377
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Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions
Journal of Applied Physics, Vol. 86, Núm. 9, pp. 4855-4860
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Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions
Journal of Applied Physics, Vol. 85, Núm. 11, pp. 7978-7980
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Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions
Journal of Materials Science: Materials in Electronics, Vol. 10, Núm. 5, pp. 413-418
1998
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Electrical characterization of deep levels existing in Mg-Si- and Mg-P-Si-implanted p+n InP junctions
Semiconductor Science and Technology, Vol. 13, Núm. 4, pp. 389-393
1997
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Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP
Journal of Applied Physics, Vol. 81, Núm. 7, pp. 3143-3150
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Detailed electrical characterization of DX centers in Se-doped AlxGa1-xAs
Journal of Applied Physics, Vol. 82, Núm. 9, pp. 4338-4345
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Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures
Applied Physics Letters, Vol. 71, Núm. 6, pp. 826-828
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Thermal emission processes of DX centres in AlxGa1-xAs:Si
Solid-State Electronics, Vol. 41, Núm. 1, pp. 103-109
1996
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Dopant level freeze-out and nonideal effects in 6H-SiC epilayer junctions
Journal of Applied Physics, Vol. 79, Núm. 1, pp. 310-315
1995
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Ability of capacitance–voltage transient technique to study spatial distribution and electric field dependence of emission properties of deep levels in semiconductors
Materials Science and Technology (United Kingdom), Vol. 11, Núm. 10, pp. 1074-1078