GUILLERMO
VINUESA SANZ
PROFESOR AYUDANTE DOCTOR
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Instituto de Microelectrónica de Barcelona
Barcelona, EspañaPublicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Barcelona (15)
2024
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A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
Materials Science in Semiconductor Processing, Vol. 169
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Impact of the temperature on the conductive filament morphology in HfO2-based RRAM
Materials Letters, Vol. 357
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Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states
Materials Science in Semiconductor Processing, Vol. 179
2023
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Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
Journal of Physics D: Applied Physics, Vol. 56, Núm. 36
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Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
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Variability and power enhancement of current controlled resistive switching devices
Microelectronic Engineering, Vol. 276
2022
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An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices
Chaos, Solitons and Fractals, Vol. 160
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Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks
Electronics (Switzerland), Vol. 11, Núm. 3
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Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge
Solid-State Electronics, Vol. 194
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Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction
Journal of Applied Physics, Vol. 132, Núm. 19
2021
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Influences of the temperature on the electrical properties of HfO2-based resistive switching devices
Electronics (Switzerland), Vol. 10, Núm. 22
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Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
Solid-State Electronics, Vol. 183
2020
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Single and complex devices on three topological configurations of HfO2 based RRAM
LAEDC 2020 - Latin American Electron Devices Conference