2013

1. Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes

   Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

2. Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes

   Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1