GERMAN
DIAZ GONZALEZ
Investigador en el periodo 1989-2007
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Universidad Politécnica de Madrid
Madrid, EspañaPublicaciones en colaboración con investigadores/as de Universidad Politécnica de Madrid (11)
2017
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Vanadium supersaturated silicon system: a theoretical and experimental approach
Journal of Physics D: Applied Physics, Vol. 50, Núm. 49
2015
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A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications
Journal of Applied Physics, Vol. 118, Núm. 24
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Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications
Applied Physics Letters, Vol. 106, Núm. 2
2013
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Experimental verification of intermediate band formation on titanium-implanted silicon
Journal of Applied Physics, Vol. 113, Núm. 2
2006
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Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire
Materials Research Society Symposium Proceedings
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The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire
Journal of Applied Physics, Vol. 100, Núm. 4
2005
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A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition
Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1044-1051
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Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
2005 Spanish Conference on Electron Devices, Proceedings
2000
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High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+ p junction devices
Journal of Applied Physics, Vol. 87, Núm. 7, pp. 3478-3482
1995
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Electrical and optical characterization of Mg, Mg/P, and Mg/Ar implants into InP:Fe
Journal of Electronic Materials, Vol. 24, Núm. 1, pp. 59-67
1989
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Synthesis, characterization and ionic conductivity of Tl(NbTe)O6
Solid State Ionics, Vol. 37, Núm. 1, pp. 87-93