GERMAN
DIAZ GONZALEZ
Forscher in der Zeit 1989-2007
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Universidad Autónoma de Madrid
Madrid, EspañaPublikationen in Zusammenarbeit mit Forschern von Universidad Autónoma de Madrid (12)
2009
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Continuous and localized Mn implantation of ZnO
Nanoscale Research Letters, Vol. 4, Núm. 8, pp. 878-887
2007
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High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties
Journal of Applied Physics, Vol. 102, Núm. 4
2005
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Etiology and prognostic significance of massive pleural effusions
Respiratory Medicine, Vol. 99, Núm. 9, pp. 1183-1187
2003
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Bonding configuration and density of defects of SiOxH y thin films deposited by the electron cyclotron resonance plasma method
Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7462-7469
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Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films
Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029
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Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition
Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938
2002
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Rapid thermal annealing effects on plasma deposited SiOx:H films
Vacuum
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Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiO x:H films
Journal of Applied Physics, Vol. 92, Núm. 4, pp. 1906-1913
1999
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Thermal stability of a-SiNx:H films deposited by plasma electron cyclotron resonance
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, Núm. 4, pp. 1280-1284
1998
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Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method
Journal of Applied Physics, Vol. 83, Núm. 1, pp. 600-603
1993
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Optical properties of polycrystalline Cd1-xMnxTe
Journal of Applied Physics, Vol. 74, Núm. 5, pp. 3459-3463
1990
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Dielectric response and ionic conductivity of Cs(NbTe)O6
Materials Research Bulletin, Vol. 25, Núm. 11, pp. 1393-1399