FAC CIENCIAS
Centro
Philips Research Eindhoven
Amsterda, HolandaPublicaciones en colaboración con investigadores/as de Philips Research Eindhoven (3)
2008
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Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
Technical Digest - International Electron Devices Meeting, IEDM
2005
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Boron redistribution in pre-amorphized Si during thermal annealing
2005 Spanish Conference on Electron Devices, Proceedings
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Simulation analysis of boron pocket deactivation in NMOS transistors with SPER junctions
2005 Spanish Conference on Electron Devices, Proceedings