ESCUELA DE INGENIERIA INFORMATICA (VA)
Centro
Universidad Complutense de Madrid
Madrid, EspañaPublicaciones en colaboración con investigadores/as de Universidad Complutense de Madrid (43)
2023
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Loneliness and Psychosocial Resources among Indigenous and Afro-Descendant Older People in Rural Areas of Chile
International journal of environmental research and public health, Vol. 20, Núm. 3
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Validation of the social provisions scale in a sample of undergraduate students of social work in Spain
International Social Work
2022
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A New 3D Convolution Network for Hyperspectral Unmixing
International Geoscience and Remote Sensing Symposium (IGARSS)
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Efficient Semantic Segmentation of Hyperspectral Images Using Adaptable Rectangular Convolution
IEEE Geoscience and Remote Sensing Letters, Vol. 19
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Psychometric Examination of the Freshman Stress Questionnaire Using a Sample of Social Work Students in Spain during the Covid-19 Pandemic
British Journal of Social Work, Vol. 52, Núm. 8, pp. 4703-4720
2019
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Adaptation and validation of the scale for the assessment of developmental assets in the neighborhood in a sample of Chilean adolescents
Revista Mexicana de Psicologia, Vol. 36, Núm. 2, pp. 119-131
2018
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Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals
Journal of Electronic Materials
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Multicore Real-Time Implementation of a Full Hyperspectral Unmixing Chain
IEEE Geoscience and Remote Sensing Letters, Vol. 15, Núm. 5, pp. 744-748
2016
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Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications
Nanoscale Research Letters, Vol. 11, Núm. 1
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GPU Implementation of Spatial-Spectral Preprocessing for Hyperspectral Unmixing
IEEE Geoscience and Remote Sensing Letters, Vol. 13, Núm. 11, pp. 1671-1675
2015
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A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications
Journal of Applied Physics, Vol. 118, Núm. 24
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Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications
Applied Physics Letters, Vol. 106, Núm. 2
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Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates
Semiconductor Science and Technology, Vol. 30, Núm. 3
2013
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Electrical study of ScO-based MIS structures using Al and Ti as gate electrodes
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
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Experimental verification of intermediate band formation on titanium-implanted silicon
Journal of Applied Physics, Vol. 113, Núm. 2
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Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1
2012
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Electrical properties of intermediate band (IB) silicon solar cells obtained by titanium ion implantation
AIP Conference Proceedings
2011
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Electrical characterization of high-pressure reactive sputtered ScO x films on silicon
Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272
2010
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Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
Journal of Applied Physics, Vol. 107, Núm. 11
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Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon
ECS Transactions