Física de la Materia Condensada, Cristalografía y Mineralogía
Saila
Lashkaryov Institute of Semiconductor Physics
Kiev, UcraniaLashkaryov Institute of Semiconductor Physics-ko ikertzaileekin lankidetzan egindako argitalpenak (1)
2004
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Properties of As+-implanted and annealed GaAs and InGaAs quantum wells: Structural and band-structure modifications
Journal of Applied Physics, Vol. 95, Núm. 3, pp. 1122-1126