Francesca Campabadal Segura-rekin lankidetzan egindako argitalpenak (4)

2013

  1. 2 MeV electron irradiation effects on the electrical characteristics of metal-oxide-silicon capacitors with atomic layer deposited Al2O 3, HfO2 and nanolaminated dielectrics

    Solid-State Electronics, Vol. 79, pp. 65-74

2011

  1. Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2 O3, HfO2, and nanolaminates on different silicon substrates

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

  2. Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O 3 and nanolaminated films deposited on p-Si

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

  3. Negative-resistance effect in Al2O3 based and nanolaminated MIS structures

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011