2021

1. Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

   Solid-State Electronics, Vol. 186

2. Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

   Solid-State Electronics, Vol. 183

3. Influences of the temperature on the electrical properties of HfO2-based resistive switching devices

   Electronics (Switzerland), Vol. 10, Núm. 22

4. Off-chip prefetching based on Hidden Markov Model for non-volatile memory architectures

   PLoS ONE, Vol. 16, Núm. 9 September 2021

5. Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications

   ECS Journal of Solid State Science and Technology, Vol. 10, Núm. 8

6. Performance assessment of amorphous HfO2-based RRAM devices for neuromorphic applications

   ECS Transactions

7. Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes

   Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

8. Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge

   Solid-State Electronics, Vol. 183

9. Thermoelectrical characterization of piezoelectric diaphragms: Towards a better understanding of ferroelectrics for future memory applications

   ECS Transactions