Informática (Arquitectura y Tecnología de Computadores, Ciencias de la Computación e Inteligencia Artificial, Lenguajes y Sistemas Informáticos)
Departamento
Instituto de Microelectrónica de Barcelona
Barcelona, EspañaPublicaciones en colaboración con investigadores/as de Instituto de Microelectrónica de Barcelona (5)
2021
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Influences of the temperature on the electrical properties of HfO2-based resistive switching devices
Electronics (Switzerland), Vol. 10, Núm. 22
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Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes
Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021
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Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge
Solid-State Electronics, Vol. 183
2016
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Electrical properties and nanoresistive switching of Ni-HfO2-Si capacitors
ECS Transactions
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Study from cryogenic to high temperatures of the high- and low-resistance-state currents of ReRAM Ni-HfO2-Si capacitors
IEEE Transactions on Electron Devices, Vol. 63, Núm. 5, pp. 1877-1883