Publicaciones en las que colabora con W. Vandervorst (4)

2008

  1. Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

    Technical Digest - International Electron Devices Meeting, IEDM

2006

  1. Boron pocket and channel deactivation in nMOS transistors with SPER junctions

    IEEE Transactions on Electron Devices, Vol. 53, Núm. 1, pp. 71-76

2005

  1. Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate

    Meeting Abstracts

  2. Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate

    Proceedings - Electrochemical Society