Publicaciones en colaboración con investigadores/as de Interuniversity Microelectronics Centre (6)

2021

  1. Standards for the Characterization of Endurance in Resistive Switching Devices

    ACS Nano, Vol. 15, Núm. 11, pp. 17214-17231

2008

  1. Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

    Technical Digest - International Electron Devices Meeting, IEDM

2006

  1. Boron pocket and channel deactivation in nMOS transistors with SPER junctions

    IEEE Transactions on Electron Devices, Vol. 53, Núm. 1, pp. 71-76

2005

  1. Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate

    Meeting Abstracts

  2. Effect of amorphization on activation and deactivation of boron in source/drain, channel and polygate

    Proceedings - Electrochemical Society

2003

  1. Enhanced low temperature electrical activation of B in Si

    Applied Physics Letters, Vol. 82, Núm. 2, pp. 215-217