Departamento
Electricidad y Electrónica
Publicaciones (25) Publicaciones en las que ha participado algún/a investigador/a
2011
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A parallel, CT-ΣΔ based ADC for OFDM UWB receivers in 130 nm CMOS
2011 18th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2011
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A study of tunneling assisted charge exchange on the inner interface of high-k dielectric stacks
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
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Atomistic process simulation for future generation nanodevices
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
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Characterization of SrTiO3-based MIM capacitors grown by using different precursors and growth temperatures
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
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Chiral metamaterials with negative refractive index composed by an eight-cranks molecule
IEEE Antennas and Wireless Propagation Letters, Vol. 10, pp. 1488-1490
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Detailed analysis of the effect of a hysteretic quantizer in a multibit, Sigma-Delta modulator
Microelectronics Journal, Vol. 42, Núm. 1, pp. 148-157
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Dynamic companion harmonic circuit models for analysis of power systems with embedded power electronics devices
Electric Power Systems Research, Vol. 81, Núm. 2, pp. 340-346
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Dynamic harmonic analysis of transformers
IEEE Latin America Transactions, Vol. 9, Núm. 7, pp. 1045-1050
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Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2 O3, HfO2, and nanolaminates on different silicon substrates
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
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Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O 3 and nanolaminated films deposited on p-Si
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
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Electrical characterization of high-pressure reactive sputtered ScO x films on silicon
Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272
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Electron irradiation effects on atomic layer deposited high-k gate dielectrics
ECS Transactions
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Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing
Physical Review B - Condensed Matter and Materials Physics, Vol. 83, Núm. 15
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Influence of precursor chemistry and growth temperature on the electrical properties of SrTiO3 -based metal-insulator-metal capacitors grown by atomic layer deposition
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
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Kinetics of large B clusters in crystalline and preamorphized silicon
Journal of Applied Physics, Vol. 110, Núm. 7
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Modeling of advanced ion implantation technologies in semiconductors
Extended Abstracts of the 11th International Workshop on Junction Technology, IWJT 2011
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Molecular implants and cold implants: Two new strategies for junction formation of future Si devices
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
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Monte Carlo simulation of silicon atomic displacement and amorphization induced by ion implantation
Journal of Applied Physics, Vol. 109, Núm. 12
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Negative-resistance effect in Al2O3 based and nanolaminated MIS structures
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
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Palabras de hielo
Alkaid: revista multitemática, Núm. 11, pp. 62-63