Artikuluak (18) Ikertzaileren baten partaidetza izan duten argitalpenak

2003

  1. A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378

  2. A new technique for obtaining the activation energy distribution of a relaxing system

    Applied Physics A: Materials Science and Processing, Vol. 77, Núm. 3-4, pp. 543-547

  3. A switched Opamp-based bandpass filter: Design and implementation in a 0.35 μm CMOS technology

    Analog Integrated Circuits and Signal Processing, Vol. 34, Núm. 3, pp. 201-209

  4. An approach to multi-resolution in time domain based on the discrete wavelet transform

    Applied Computational Electromagnetics Society Journal, Vol. 18, Núm. 3, pp. 210-218

  5. Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films

    Journal of Applied Physics, Vol. 94, Núm. 1, pp. 163-168

  6. Atomistic analysis of defect evolution and transient enhanced diffusion in silicon

    Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1013-1018

  7. Atomistic modeling of amorphization and recrystallization in silicon

    Applied Physics Letters, Vol. 82, Núm. 13, pp. 2038-2040

  8. Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles

    Applied Physics Letters, Vol. 83, Núm. 20, pp. 4166-4168

  9. Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates

    MRS Proceedings, Vol. 786

  10. Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290

  11. Enhanced low temperature electrical activation of B in Si

    Applied Physics Letters, Vol. 82, Núm. 2, pp. 215-217

  12. Influence of stoichiometry on the magnetic disaccommodation in barium M-type hexaferrites

    Journal of Physics D: Applied Physics, Vol. 36, Núm. 9, pp. 1062-1070

  13. Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Films

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, Núm. 8, pp. 4978-4981

  14. Microscopic description of the irradiation-induced amorphization in silicon

    Physical Review Letters, Vol. 91, Núm. 13

  15. Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena

    Physical Review B - Condensed Matter and Materials Physics, Vol. 68, Núm. 19

  16. Modeling of dopant and defect interactions in Si process simulators

    Defect and Diffusion Forum, Vol. 221-223, pp. 31-40

  17. Multiresolution model of electromagnetic wave propagation in dispersive materials

    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 16, Núm. 3, pp. 239-247

  18. Time domain modeling of electromagnetic wave propagation in tellegen media

    Microwave and Optical Technology Letters, Vol. 38, Núm. 3, pp. 167-168