Molecular models and activation energies for bonding rearrangement in plasma-deposited α-SiNx: H dielectric thin films treated by rapid thermal annealing

  1. Martínez, F.L.
  2. Del Prado, A.
  3. Mártil, I.
  4. González-Diaz, G.
Revue:
Physical Review B - Condensed Matter and Materials Physics

ISSN: 0163-1829

Année de publication: 2001

Volumen: 63

Número: 24

Pages: 2453201-2453211

Type: Article

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La source de données: Scopus