Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates

  1. Pampillón, M.A.
  2. Feijoo, P.C.
  3. San Andrés, E.
  4. García, H.
  5. Castán, H.
  6. Dueñas, S.
Revue:
Semiconductor Science and Technology

ISSN: 1361-6641,  0268-1242

Année de publication: 2015

Volumen: 30

Número: 3

Type: Article

DOI: 10.1088/0268-1242/30/3/035023 GOOGLE SCHOLAR
La source de données: Scopus