Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials
- Agarwal, A.
- Gossmann, H.-J.
- Eaglesham, D.J.
- Pelaz, L.
- Jacobson, D.C.
- Haynes, T.E.
- Erokhin, Yu.E.
ISSN: 0003-6951
Year of publication: 1997
Volume: 71
Issue: 21
Pages: 3141-3143
Type: Article