Reduction of transient diffusion from 1-5 keV Si+ ion implantation due to surface annihilation of interstitials

  1. Agarwal, A.
  2. Gossmann, H.-J.
  3. Eaglesham, D.J.
  4. Pelaz, L.
  5. Jacobson, D.C.
  6. Haynes, T.E.
  7. Erokhin, Yu.E.
Aldizkaria:
Applied Physics Letters

ISSN: 0003-6951

Argitalpen urtea: 1997

Alea: 71

Zenbakia: 21

Orrialdeak: 3141-3143

Mota: Artikulua

DOI: 10.1063/1.120552 GOOGLE SCHOLAR
Datuen iturria: Scopus