Study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques
- Martín, P.
- Jiménez, J.
- Frigeri, C.
- Sanz, L.F.
- Weyher, J.L.
ISSN: 0884-2914
Datum der Publikation: 1999
Ausgabe: 14
Nummer: 5
Seiten: 1732-1743
Art: Artikel