Study of the dislocations in Si-doped GaAs comparing diluted Sirtl light etching, electron-beam-induced current, and micro-Raman techniques
- Martín, P.
- Jiménez, J.
- Frigeri, C.
- Sanz, L.F.
- Weyher, J.L.
ISSN: 0884-2914
Ano de publicación: 1999
Volume: 14
Número: 5
Páxinas: 1732-1743
Tipo: Artigo