Use of transient enhanced diffusion to tailor boron out-diffusion

  1. Vuong, H.-H.
  2. Xie, Y.-H.
  3. Frei, M.R.
  4. Hobler, G.
  5. Pelaz, L.
  6. Rafferty, C.S.
Journal:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Year of publication: 2000

Volume: 47

Issue: 7

Pages: 1401-1405

Type: Article

DOI: 10.1109/16.848283 GOOGLE SCHOLAR