Atomistic modeling of ion beam induced defects in Si: From point defects to continuous amorphous layers

  1. Pelaz, L.
  2. Marqués, L.A.
  3. López, P.
  4. Santos, I.
  5. Aboy, M.
  6. Barbolla, J.
Proceedings:
Materials Research Society Symposium - Proceedings

ISSN: 0272-9172

Year of publication: 2004

Volume: 810

Pages: 431-436

Type: Conference paper

DOI: 10.1557/PROC-810-C10.1 GOOGLE SCHOLAR
Data source: Scopus