Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors
- Dueñas, S.
- Castán, H.
- Garcia, H.
- Gómez, A.
- Bailón, L.
- Kukli, K.
- Niinistö, J.
- Ritala, M.
- Leskelä, M.
ISSN: 1071-1023
Year of publication: 2009
Volume: 27
Issue: 1
Pages: 389-393
Type: Article