Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors

  1. Blasco, J.
  2. Castán, H.
  3. García, H.
  4. Dueñas, S.
  5. Suñé, J.
  6. Kemell, M.
  7. Kukli, K.
  8. Ritala, M.
  9. Leskelä, M.
  10. Miranda, E.
Journal:
Microelectronics Reliability

ISSN: 0026-2714

Year of publication: 2014

Volume: 54

Issue: 9-10

Pages: 1707-1711

Type: Conference paper

DOI: 10.1016/J.MICROREL.2014.07.067 GOOGLE SCHOLAR
Data source: Scopus