Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors

  1. Blasco, J.
  2. Castán, H.
  3. García, H.
  4. Dueñas, S.
  5. Suñé, J.
  6. Kemell, M.
  7. Kukli, K.
  8. Ritala, M.
  9. Leskelä, M.
  10. Miranda, E.
Revue:
Microelectronics Reliability

ISSN: 0026-2714

Année de publication: 2014

Volumen: 54

Número: 9-10

Pages: 1707-1711

Type: Communication dans un congrès

DOI: 10.1016/J.MICROREL.2014.07.067 GOOGLE SCHOLAR
La source de données: Scopus