Experimental observation of negative susceptance in HfO2-based RRAM devices

  1. Duenas, S.
  2. Castan, H.
  3. Garcia, H.
  4. Ossorio, O.G.
  5. Dominguez, L.A.
  6. Miranda, E.
Revue:
IEEE Electron Device Letters

ISSN: 0741-3106

Année de publication: 2017

Volumen: 38

Número: 9

Pages: 1216-1219

Type: Article

DOI: 10.1109/LED.2017.2723054 GOOGLE SCHOLAR
La source de données: Scopus